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october 2015 docid028462 rev 1 1 / 13 this is information on a product in full production. www.st.com STFU13N80K5 n - channel 800 v, 0.37 typ., 12 a mdmesh? k5 power mosfet in a to - 220fp ultra narrow leads package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d p tot STFU13N80K5 800 v 0.45 ? 12 a 35 w ? industrys lowest r ds(on) x area ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this very high voltage n - channel power mosfet is designed usi ng mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packing STFU13N80K5 13n80k5 to - 220fp ultra narrow leads tube t o-220f p ultra narrow leads 1 2 3
contents STFU13N80K5 2 / 13 docid028462 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuit ................................ ................................ ....................... 9 4 package information ................................ ................................ ..... 10 4.1 to - 220fp ultra narrow leads package informatio n ......................... 10 5 revision history ................................ ................................ ............ 12
STFU13N80K5 electrical ratings docid028462 rev 1 3 / 13 1 electrical ratings table 2: absolute max imum ratings symbol parameter value unit v gs gate source voltage 30 v i d drain current (continuous) at t c = 25 c 12 (1) a i d drain current (continuous) at t c = 100 c 7.6 (1) a i dm (2) drain current (pulsed) 48 (1) a p tot total dissipation at t c = 25 c 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 148 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v dv/dt (3) peak diode recovery voltage s lope 4.5 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) limited by package. (2) pulse width limited by safe operating area. (3) i sd 12 a, di/dt 100 a/s, v peak v (br)dss . (4) v sd 640 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 3.57 c/w r thj - amb thermal resistance junction - ambient max 62.5
electrical characteristics STFU13N80K5 4 / 13 docid028462 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v gs = 0 v, v ds = 800 v 1 a v gs = 0 v, v ds = 800 v, t c = 125 c 50 a i gss gate - body leakage current (v ds = 0) v ds = 0 v, v gs = 20 v 10 a v gs(th) gate threshold vol tage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 6 a 0.37 0.45 ? table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 870 - pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance - 2 - pf c o(tr) (1) equivalent output capacitance v gs = 0 v, v ds = 0 to 640 v - 110 - pf c o(er) (2) equivalent capac itance energy related 43 pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 5 - ? q g total gate charge v dd = 640 v, i d = 12 a, v gs = 10 v - 29 - nc q gs gate - source charge - 7 - nc q gd gate - drain charge - 18 - nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss . table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 400 v, i d = 6 a, r g = 4.7 ?, v gs = 10 v - 16 - ns t r rise time - 16 - ns t d(off) turn - off delay time - 42 - ns t f fall time - 16 - ns
STFU13N80K5 electrical characteristics docid028462 rev 1 5 / 13 table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 14 a i sdm source - drai n current (pulsed) - 56 a v sd (1) forward on voltage i sd = 12 a, v gs = 0 v - 1.5 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v - 406 ns q rr reverse recovery charge - 5.7 c i rrm reverse rec overy current - 28 a t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c - 600 ns q rr reverse recovery charge - 7.9 c i rrm reverse recovery current - 26 a notes: (1) pulsed: pulse duration = 300s, duty cycle 1.5%. table 8: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1ma, i d = 0 v 30 - - v the built - in back - to - back zener diodes are spe cifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection,thus eliminating the need for additional external componentry.
electrical characteristics STFU13N80K5 6 / 13 docid028462 rev 1 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : out put characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance w
STFU13N80K5 electrical characteristics docid028462 rev 1 7 / 13 figure 8 : capacitance variations figure 9 : source - drain diode forward characteristics figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized on - r esistance vs temperature figure 12 : output capacitance stored energy figure 13 : normalized vds vs temperature
electrical characteristics STFU13N80K5 8 / 13 docid028462 rev 1 figure 14 : maximum avalanche energy vs temperature
STFU13N80K5 test circuit docid028462 rev 1 9 / 13 3 test cir cuit figure 15 : test circuit for resistive load switching times figure 16 : test circuit for gate charge behavi or figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped inductive load test circuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform
package information STFU13N80K5 10 / 13 docid028462 rev 1 4 package information in order to meet environmental requirements, st offers these devices in different grades of ec opack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 220fp ultra narrow leads package information figure 21 : to - 220fp ultra narrow leads package outline 8576148_1
STFU13N80K5 package i nformation docid028462 rev 1 11 / 13 table 9: to - 220fp ultra narrow leads mechanical data dim. mm min. typ. max. a 4.40 4.60 b 2.50 2.70 d 2.50 2.75 e 0.45 0.60 f 0.65 0.75 f1 - 0.90 g 4.95 5.20 g1 2.40 2.54 2.70 h 10.00 10.40 l2 15.10 15.90 l3 28.50 30.50 l4 10.20 11.00 l5 2.50 3.10 l6 15.60 16.40 l7 9.00 9.30 l8 3.20 3.60 l9 - 1.30 dia. 3.00 3.20
revision history STFU13N80K5 12 / 13 docid028462 rev 1 5 re vision history table 10: document revision history date revision changes 08 - oct - 2015 1 initial release
STFU13N80K5 docid028462 rev 1 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any tim e without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely resp onsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale o f st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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